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Datasheet BDT81 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BDT81 | (BDT81 - BDT87) Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type |
 Inchange Semiconductor |
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| 2 | BDT81 | (BDT81 - BDT87) SILICON POWER TRANSISTOR
NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS
The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. PNP complements are BDT82 |
 Comset Semiconductors |
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| 1 | BDT81F | (BDT81F - BDT87F) Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to T |
Inchange Semiconductor |
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