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Datasheet BD791 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BD791 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD791
DESCRIPTION ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 |
 Inchange Semiconductor |
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| 3 | BD791 | NPN Silicon Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD791/D
NPN Plastic Silicon Power Transistor
. . . designed for low power audio amplifier and low–current, high speed switching
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) • High DC |
 Motorola Semiconductors |
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| 2 | BD791 | NPN Plastic Silicon Power Transistor ON Semiconductort
NPN Plastic Silicon Power Transistor
. . . designed for low power audio amplifier and low–current, high
speed switching applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
• Low |
 ON Semiconductor |
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| 1 | BD791 | Trans GP BJT NPN 100V 4A 3-Pin TO-225 |
 New Jersey Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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