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Datasheet BD638 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 25 | BD638 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD638
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·Complement to Type BD637
APPLICATIONS ·Designed for amplifier and switching applicat |
 Inchange Semiconductor |
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| 24 | BD638 | PNP Epibase Power Transistor |
 Texas |
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| 23 | BD63801EFV | Silicon monolithic integrated circuits 1/4
STRUCTURE PRODUCT SERIES TYPE FUNCTION
Silicon monolithic integrated circuits Bipolar stepping motor driver
BD63801EFV
・PWM constant current controllable two H bridge driver ・Built-in translator circuit for CLK-IN control ・Full, Half step
○Absolute maximum ratings(Ta=25℃) Item Supp |
 ROHM Semiconductor |
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| 22 | BD6380EFV | Bipolar stepping motor driver
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in thi |
ROHM Semiconductor |
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