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Datasheet BCW68 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 52 | BCW68 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
•c
BCW67 BCW68
32 45 45 60
5.0
800
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device ADissipation, T = 25°C
D |
 Motorola Semiconductors |
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| 51 | BCW68 | PNP General Purpose Amplifier Features: tFor general AF applications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW65,BCW66(NPN)
Applications: t and switching applications
BCW67/BCW68
Ordering Information
Type No. BCW67A/B/C BCW68F/G/H
Marking: DA/DB/DC DF/DG/DH
Maximum Ratings & C |
 Multicomp |
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| 50 | BCW68 | SILICON PNP TRANSISTORS BCW67 SERIES BCW68 SERIES
SURFACE MOUNT PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen |
 Central Semiconductor |
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| 49 | BCW68 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
BCW68
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperat |
 KEC |
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