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Datasheet BCR12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 31 | BCR12 | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions in mm
4.5 4
1.3
16 MAX
∗
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
4.5
7.0
φ3.6±0.2
0.5
2.6
123 24 1 2 |
 Mitsubishi Electric Semiconductor |
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| 30 | BCR129 | NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) BCR 129
NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ)
Type BCR 129
Marking Ordering Code WVs Q62702-
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emit |
 Siemens Semiconductor Group |
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| 29 | BCR129 | NPN Silicon Digital Transistor BCR129.../SEMH4
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR129/F/L3 BCR129T/W
C 3
BCR129S SEMH4
C1 |
 Infineon Technologies AG |
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| 28 | BCR129F | NPN Silicon Digital Transistor BCR129.../SEMH4
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR129/F/L3 BCR129T/W
C 3
BCR129S SEMH4
C1 |
Infineon Technologies AG |
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