Datasheet BC848B-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BC848B-G	(BC84xx-G) Small Signal Transistor Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.	Comchip

BC848 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BC848	NPN EPITAXIAL SILICON TRANSISTOR	Fairchild Semiconductor
BC848B	NPN General Purpose Transistor Transistors BC848BW / BC848B NPN General Purpose Transistor BC848BW / BC848B zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage	ROHM Semiconductor
BC848C	NPN Transistor BC848C SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL	RECTRON

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Número de pieza	Descripción	Fabricantes	PDF
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