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Datasheet BC638 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | BC638 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN BC636, 638, 640 PNP
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM |
 CDIL |
 |
| 9 | BC638 | PNP Type Plastic Encapsulate Transistors Elektronische Bauelemente
BC636/638/640
PNP Type
Plastic Encapsulate Transistors
FEATURE
Power Dissipation: PCM: 0.83 mW (Tamb=25oC)
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
4.5±0.2
TO-92
4.55±0.2
3.5±0.2
14.3±0.2
MAXIMUM RATINGS (TA=25 oC unless otherwise s |
 SeCoS |
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| 8 | BC638 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES ᴌComplementary to BC637.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC P |
 KEC |
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| 7 | BC638 | PNP medium power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC636; BC638; BC640 PNP medium power transistors
Product specification Supersedes data of 1997 Mar 07 1999 Apr 23
Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES • High current (max. 1 A) • Low vo |
 NXP Semiconductors |
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