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Datasheet BC338 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 38 | BC338 | NPN General Purpose Transistor NPN General Purpose Transistor
P b Lead(Pb)-Free
BC337/BC338
COLLECTOR 1
2 BASE
3 EMITTER
TO-92
1 2 3
Maximum Ratings(TA=25°C unless otherwise noted)
Rating
Symbol
BC337
BC338
Collector-Base voltage
VCBO
50
30
Collector-Emitter voltage
VCEO
45
25
Emitter-Base voltage
VEBO
5.0
5. |
 WEITRON |
 |
| 37 | BC338 | NPN Plastic-Encapsulate Transistors Elektronische Bauelemente
BC337/BC338
NPN Plastic-Encapsulate Transistors
FEATURES
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Power dissipation
PCM : 0.625 W Tamb=25 Collector current
ICM : 0.8 A
Collector-base voltage
V(BR)CBO : BC337 50 BC338 30
V
1 23
TO-92
1 |
 SeCoS |
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| 36 | BC338 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
Collector-base voltage
VCBO:
BC337 5 |
 JCET |
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| 35 | BC338 | SWITCHING AND AMPLIFIER APPLICATIONS BC337/338
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage : BC3 |
 Fairchild Semiconductor |
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