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Datasheet BAV70LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BAV70LT1 | DIODE RoHS BAV70LT1
SOT-23 Plastic-Encapsulate Diodes
BAV70LT1 SWITCHING DIODE
DFEATURES
TPower dissipation
.,LPD: 225 mW(Tamb=25℃)
Forward Current
IF:
OReverse Voltage
200 mA
2.9 1.9 0.95 0.95 0.4
VR: 70 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +15℃
1
1.
2.4 |
 WEJ |
 |
| 4 | BAV70LT1 | CASE 318-08/ STYLE 9 SOT-23 (TO-236AB) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAV70LT1/D
Monolithic Dual Switching Diode Common Cathode
ANODE 1 3 CATHODE 2 ANODE
BAV70LT1
Motorola Preferred Device
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Cu |
 Motorola Inc |
|
| 3 | BAV70LT1 | Monolithic Dual Switching Diode Common Cathode
ON Semiconductort
Monolithic Dual Switching Diode Common Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
BAV70LT1
3 1 2
THERMAL CHARACTERISTICS
Characteristic T |
 ON Semiconductor |
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| 2 | BAV70LT1 | Monolithic Dual Switching Diode Common Cathode
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode Common Cathode
BAV70LT1
3
1 ANODE 3 CATHODE 2 ANODE
1 2
CASE 318–08, STYLE 9 SOT–23 (TO–236AB)
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Su |
 Leshan Radio Company |
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