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Datasheet BAS4 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
200 | BAS4 | CASE 318-08/ STYLE 8 SOT-23 TO-236AB MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS40LT1/D
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface moun |
Motorola Inc |
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199 | BAS4 | Schottky Diodes BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ These diodes feature very low turn-on
Top View
.056 (1.43) .052 (1.33)
voltage and fast switching.
♦ These devices are protected by a PN
junction guard ring against excessive voltage, such as electrostat |
General Semiconductor |
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198 | BAS4 | Low-leakage diode DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BAS45AL Low-leakage diode
Product specification Supersedes data of 1999 May 04 1999 May 28
Philips Semiconductors
Product specification
Low-leakage diode
FEATURES • Continuous reverse voltage: max. 125 V • Repetitive peak forward c |
NXP Semiconductors |
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197 | BAS4 | SCHOTTKY array SERIES BAS40
8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax: (480) 947-1503
and
BAS70
SCHOTTKYarray™ SERIES
DESCRIPTION
Various configurations of Schottky barrier's diodes in SOT-23 packages are provided for general-purpose use in high-speed switching, mixers and detector application |
Microsemi Corporation |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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