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Datasheet BAS12 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
17 | BAS12 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum o |
NXP Semiconductors |
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16 | BAS125 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) Silicon Schottky Diodes
q q q
BAS 125 …
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 O |
Siemens Semiconductor Group |
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15 | BAS125-04 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) Silicon Schottky Diodes
q q q
BAS 125 …
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 O |
Siemens Semiconductor Group |
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14 | BAS125-04W | Preliminary data Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping application) BAS 125W Silicon Schottky Diodes
Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handl |
Siemens Semiconductor Group |
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Sanken |
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