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BAS116 Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
29 BAS116   

SWITCHING DIODE


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS116 SWITCHING DIODE FEATURES z Low leakage current applications z Medium speed switching times MARKING: JV SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics @Ta=25℃ Symbol VRRM VRWM VR IFM IFSM PD TJ TSTG Limit 75 200 2.0 225 150 -55~+150 Unit V mA A mW ℃ ℃ Parameter Reverse breakdown voltage Forwa
JCET
JCET
datasheet BAS116 pdf
28 BAS116   

LOW LEAKAGE SWITCHING DIODE


BAS116 LOW LEAKAGE SWITCHING DIODE Features • Plastic SMD package • Low leakage current • High switching speed Application • Low leakage current applications in surface mounted circuits. 3 12 Marking Code: JV SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Range t = 1 µs t = 1 ms t=1s Symbol VRRM VR IF IFRM IFSM Ptot Tj TS Value 85 75 215 500 4 1 0.5 250 150 - 65 to + 150 Characteristics
SEMTECH
SEMTECH
datasheet BAS116 pdf
27 BAS116   

LOW LEAKAGE SWITCHING DIODES


BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.008 gram • Marking: BAS116: PA,BAW156:P4,BAV170:P3,BAV199:PB ABSOLUTE RATINGS (each diode) Reverse Voltage PA RA ME TE R Peak Reverse Voltage Continuous Forward Current Non-repetitive Peak
Pan Jit International
Pan Jit International
datasheet BAS116 pdf
26 BAS116   

SMD Switching Diode


Small Signal Product BAS116 Taiwan Semiconductor 225mW, SMD Switching Diode FEATURES - Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) under plate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 8 mg (approximately) - Marking Code: JV MAXIMUM RATINGS AND ELECTRICAL CHARAC
Taiwan Semiconductor
Taiwan Semiconductor
datasheet BAS116 pdf
25 BAS116   

Three Terminals SMD Low Leakage Switching Diode


Three Terminals SMD Low Leakage Switching Diode BAS116/BAW156/BAV170/BAV199 Three Terminals SMD Low Leakage Switching Diode Features • Surface mount package ideally suited for automatic insertion • Very low leakage current • Low capacitance • RoHS Compliant Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 Approx. 0.008 gram SOT-23 Maximum Ratings* (T Ambient=25ºC unless noted otherwise) Symbol Description Pinout Figure BAS116 1 BAW156 5 BAV170 4 Marking Code PA P4 P3 VR VRRM IF(AV) IFSM PD RthJA TJ, TSTG Reverse Voltage Peak Reverse Voltage Average Rectified Cont
TAITRON
TAITRON
datasheet BAS116 pdf
24 BAS116   

SILICON PLANAR SWITCHING DIODE


Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 12 BAS116 SOT-23 Formed SMD Package Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage Repetitive Peak Reverse Voltage Forward Current (DC) Non Repetitive Peak Surge Forward Current t=1µs t=1s Power Dissipation at Ta=54ºC Junction Temperature Storage Temperature Range SYMBOL VR VRRM IF IFSM IFSM PD Tj Tstg VALUE 80 85 250 4.5 0.5 250 150 - 65 to +150 Thermal Resistance Junction to Soldering Point *Rth (j-s) <
CDIL
CDIL
datasheet BAS116 pdf
23 BAS116   

Switching Diode


MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Power dissipation: 225mW (Tamb=25ć) • Forward current:200mA • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 x Marking: JV Maximum Ratings • Operating Temperature: -55к to +150к • Storage Temperature: -55к to +150к BAS116 225mW Switching Diode SOT-23 A D CB FE Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage VR 75
MCC
MCC
datasheet BAS116 pdf
22 BAS116   

Surface Mount Switching Diode


Elektronische Bauelemente BAS116 Voltage 0.1 A, 80 V Surface Mount Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Low leakage current applications z Medium speed witching times PACKAGE DIMENSIONS MARKING: JV 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Bl
SeCoS
SeCoS
datasheet BAS116 pdf
21 BAS116   

Low-leakage diode


DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS116 Low-leakage diode Product specification Supersedes data of 1996 Mar 13 1999 May 26 Philips Semiconductors Product specification Low-leakage diode FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION • Low leakage current applications in surface mounted circuits. Top view handbook, 4 columns BAS116 PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION 2 1 2 n.c. 3 3
NXP
NXP
datasheet BAS116 pdf
20 BAS116   

Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)


Silicon Low Leakage Diode Low-leakage applications q Medium speed switching times q Single diode q BAS 116 Type BAS 116 Marking JVs Ordering Code (tape and reel) Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 75 85 250 4.5 370 150 – 65 … + 150 Unit V mA A mW ˚C 330 260 K/W 1) 2) For detailed information
Siemens Semiconductor Group
Siemens Semiconductor Group
datasheet BAS116 pdf


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