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Datasheet BA779 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | BA779 | Silicon PIN Diodes BA779.BA779S
Vishay Telefunken
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable attenuators
94 8550
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature r |
 Vishay Telefunken |
 |
| 8 | BA779-2-G | RF PIN Diodes www.vishay.com
BA779-2-G
Vishay Semiconductors
RF PIN Diodes - Dual Series
3 12
FEATURES • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Base P/N-HG3 - green, automotive grade • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLI |
 Vishay |
|
| 7 | BA779-G | RF PIN Diodes www.vishay.com 1
BA779-G
Vishay Semiconductors
RF PIN Diodes
3 2
FEATURES • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Base P/N-HG3 - green, automotive grade • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Cur |
Vishay |
|
| 6 | BA7792 | Silicon PIN Diodes BA779–2
Vishay Telefunken
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable attenuators
94 8550
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature rang |
Vishay Telefunken |
|
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