Datasheet BA01207 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BA01207	GaAs HBT HYBRID IC MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC DESCRIPTION The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vr	Mitsubishi Electric

BA01 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BA01303	Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module MITSUBISHI SEMICONDUCTOR BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module Specification are subject to change without notice. DESCRIPTION BA01303 is a front-end module for triple band (EGSM900/DCS1800/PCS1900) handheld phone using InGaP HBT	Mitsubishi Electric
BA01232	GaAs RF amplifier designed MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232 HBT HYBRID IC OUTLINE DRAWING Unit : millimeters DESCRIPTION The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone. ‡@ FEATURES Low voltage	Mitsubishi Electric Semiconductor
BA01207	GaAs HBT HYBRID IC MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC DESCRIPTION The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:G	Mitsubishi Electric

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Número de pieza	Descripción	Fabricantes	PDF
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