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Datasheet B156 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
75 | B156 | PNP Transistor |
Hitachi |
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74 | B1560 | Silicon PNP Epitaxial Planar Transistor (7 0 Ω ) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1560 –160 –150 –5 –10 –1 100(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
2SB1560
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr COB Conditions V |
Sanken electric |
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73 | B1565 | Power Transistor 2SB1565
Transistors
For Power Amplification (−60V, −3A)
2SB1565
zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm)
TO-220FN
10.0
4.5
φ3.2
2.8
14.0
zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA.
(1)Ba |
ROHM Semiconductor |
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72 | B1566 | Power Transistor Transistors
2SB1566
For Power Amplification (−60V, −3A)
2SB1566
zStructure PNP Silicon Epitaxial Planar Transistor
zFeatures 1) Low VCE (sat). 2) Wide SOA.
zApplications Relay drive DC-DC converter Stabilized power supply
zExternal dimensions (Unit : mm)
TO-220FN
10.0 φ3.2
4.5 2.8
15.0 |
ROHM Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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