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Datasheet AO3416 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | AO3416 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3416 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use |
 Tuofeng Semiconductor |
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| 3 | AO3416 | N-Channel Enhancement Mode Field Effect Transistor AO3416, AO3416L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
 Freescale |
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| 2 | AO3416 | 20V N-Channel MOSFET AO3416
20V N-Channel MOSFET
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
Product Summary
VD |
 Alpha & Omega Semiconductors |
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| 1 | AO3416L | N-Channel Enhancement Mode Field Effect Transistor AO3416, AO3416L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
Freescale |
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