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Datasheet AO3415 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | AO3415 | P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3415
Rev 3: May 2004
AO3415 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This dev |
 Tuofeng Semiconductor |
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| 3 | AO3415 | P-Channel 20-V (D-S) MOSFET Freescale Analog Power P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power ma |
 Freescale |
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| 2 | AO3415 | 20V P-Channel MOSFET AO3415
20V P-Channel MOSFET
General Description
The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.
Product Summary
VDS ID (at VGS=-4.5V) RDS(ON) (at |
 Alpha & Omega Semiconductors |
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| 1 | AO3415A | 20V P-Channel MOSFET AO3415A
20V P-Channel MOSFET
General Description
The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.
Product Summary
VDS ID (at VGS=-4.5V) RDS(ON) ( |
Alpha & Omega Semiconductors |
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