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Datasheet AO3409 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
7 AO3409   P-Channel Enhancement Mode Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409 AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applicatio
Tuofeng Semiconductor
Tuofeng Semiconductor
datasheet AO3409 pdf
6 AO3409   P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=
HOTTECH
HOTTECH
datasheet AO3409 pdf
5 AO3409   P-Channel Enhancement Mode Field Effect Transistor

SMD Type P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409) MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4
Kexin
Kexin
datasheet AO3409 pdf
4 AO3409   30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) AO3409 SOT-23-3L D GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Mi
JinYu
JinYu
datasheet AO3409 pdf


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