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Datasheet AO3407 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | AO3407 | P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3407
AO3407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applicati |
 Tuofeng Semiconductor |
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| 7 | AO3407 | P-Channel MOSFET Plastic-Encapsulate Mosfets
FEATURES
The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
G
AO3407
P-Channel MOSFET
D
1.Gate
2.Source 3.Drain
SOT-23
S
Absolute Maximum Ratings (TA |
 HOTTECH |
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| 6 | AO3407 | P-CHANNEL MOSFET AO3407
Rev.C Nov.-2015
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
VDS (V) = -30V ID = -4.1 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V)
用途 / Applications 适用于作负载� |
 BLUE ROCKET ELECTRONICS |
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| 5 | AO3407 | P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3407
AO3407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applicati |
 ETC |
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