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Datasheet A821 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | A821 | PNP Plastic Encapsulated Transistor 2SA821
Elektronische Bauelemente -0.03A , -210 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High Breakdown Voltage Low Transition Frequency
CLASSIFICATION OF hFE
Product-Rank 2SA821-N Range 56~120 2SA8 |
 Secos |
 |
| 2 | A821 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
FEATURES
TRANSISTOR (PNP) TO¡ª 92
Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperatur |
 JIANGSU CHANGJIANG |
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| 1 | A821S | PNP Transistor - 2SA821S 2SA821S
Transistors
High-voltage Amplifier Transistor (−210V, −30mA)
2SA821S
zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm)
SPT
4.0
3.0
2.0
(15Min.)
3Min.
0.45
2.5 5.0
(1) (2) (3)
0.5
0.45
(1)Emitter (2)Collector (3)B |
 ROHM Semiconductor |
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