Datasheet A1837 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	A1837	2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-e	Toshiba Semiconductor

A1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
A1SHB	P-Channel Trench Power MOSFET P-Channel Trench Power MOSFET General Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.	H&M Semiconductor
A1015	PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage	Jiangsu Changjiang
A1837	2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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