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Datasheet A1757 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 A1757   UPA1757

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description This product is Dual N-Channel MOS Field Effect Transistor Package Drawing (Unit : mm) designed for power management application of notebook computers, and Li-ion b
NEC
NEC
datasheet A1757 pdf

A1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
A1SHB

P-Channel Trench Power MOSFET

P-Channel Trench Power MOSFET General Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
H&M Semiconductor
H&M Semiconductor
datasheet pdf - H&M Semiconductor
A1015

PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage
Jiangsu Changjiang
Jiangsu Changjiang
datasheet pdf - Jiangsu Changjiang
A1837

PNP Transistor - 2SA1837

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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