Datasheet A1516 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	A1516	SILICON PNP TRANSISTOR INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications ·Recommend for	ISC

A1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
A1SHB	P-Channel Trench Power MOSFET P-Channel Trench Power MOSFET General Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.	H&M Semiconductor
A1015	PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage	Jiangsu Changjiang
A1837	PNP Transistor - 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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