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Datasheet A1015 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | A1015 | Photo Interrupters Transmissive Photosensors (Photo Interrupters)
CNA1015
Photo Interrupters
Overview
(2.5)
Unit : mm
14.0 5.0±0.15 A 0.5±0.1 Device center
5.0 (C1)
10.0 min. 2.5
CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the lig |
 Panasonic Semiconductor |
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| 9 | A1015 | PNP general purpose transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015 PNP general purpose transistor
Product specification Supersedes data of 1997 May 01 1999 Apr 08
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES • Low current (max. 150 mA) • Low voltage |
 NXP Semiconductors |
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| 8 | A1015 | 50V, 150mA, Silicon PNP Epitaxial Type Transistor 2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications Low Noise Amplifier Applications
• High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, |
 Toshiba Semiconductor |
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| 7 | A1015 | 150mA,50V, PNP TRANSISTOR, 2SA1015 UTC 2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherw |
 Unisonic Technologies |
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