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Datasheet 8N60B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 8N60B | N-CHANNEL MOSFET 8N60(F,B,H)
8A mps,600 Volts N-CHANNEL MOSFET
FEATURE
8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 8N60
ITO-220AB 8N60F
TO-263 8N60B
TO-262 8N60H
Absolute Maximum Ratings(TC=25℃,unl |
CHONGQING PINGYANG |
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1 | 8N60B | IXGT28N60B Ultra-Low VCE(sat) IGBT with Diode
IXGH 28N60B IXGT 28N60B
VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Tran |
IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
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