Datasheet 60N20F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	60N20F	IXFH60N20F Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH60N20F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg	IXYS

60N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
60N03S	AP60N03S AP60N03S Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID GD S 30V 13.5mΩ 55A ▼ Simple Drive Requirement TO-263 Description The Advanced Power MOSFETs from APEC provide	Advanced Power Electronics
60NF06	N-Channel MOSFET Transistor INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 60NF06 FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRI	Inchange
60N3LH5	N-channel Power MOSFET STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchm	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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