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Datasheet 4N70 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | 4N70 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N70
·DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 700V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARA |
Inchange Semiconductor |
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7 | 4N70 | 700V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N70
4.4A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high s |
Unisonic Technologies |
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6 | 4N70-C | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
4N70-C
Preliminary
4A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This hi |
Unisonic Technologies |
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5 | 4N70-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
4N70-E
4.4A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switc |
Unisonic Technologies |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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