Datasheet 4N60H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	4N60H	N-CHANNEL MOSFET KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2.	KIA

4N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
4NF20L	STN4NF20L STN4NF20L N-channel 200 V, 1.1 Ω , 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code STN4NF20L ■ ■ ■ VDSS 200 V RDS(on) max. < 1.5 Ω ID 1A 2 100% avalanche tested Low gate charge Exceptional dv/dt capability 1 SOT-223 2 3 Application Swi	STMicroelectronics
4N35	Optocoupler 4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection A1 C2 NC 3 6B 5C 4E 21842 i179004-5 DESCRIPTION Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS • Underwriters lab	Vishay Telefunken
4N60B	600V N-Channel MOSFET SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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