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Datasheet 4AM13 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 4AM13   Silicon N-Channel/P-Channel Power MOS FET Array

4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A • • • • • Capable of 4 V gate drive Low drive c
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 4AM13 pdf

4A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
4AK19

Silicon N Channel MOS FET High Speed Power Switching

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density m
Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf - Hitachi Semiconductor
4AC14

Silicon NPN Triple Diffused

4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 1 1 7 10 6 4AC14 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Collector to base voltage C
Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf - Hitachi Semiconductor
4AF2

(4AF Series) Pressfit Rectifier Diodes

International Rectifier
International Rectifier
datasheet pdf - International Rectifier


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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