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Datasheet 40N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 40N60 | IXSH40N60 VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V
I C25 75 A 75 A
VCE(sat) 2.5 V 3.0 V
Short Circuit SOA Capability
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25 |
 IXYS Corporation |
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| 1 | 40N60A4D | HGT1N40N60A4D HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the |
 Fairchild Semiconductor |
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