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Datasheet 40N120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 40N120    IXEH40N120

IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE(sat) typ. = 2.4 V C C TO-247 AD G E G E G C E C (TAB) IXEH 40N120 IXEH 40N120D1 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBS
 IXYS Corporation
IXYS Corporation		 datasheet 40N120 pdf

40N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
40N03P

SSM40N03P

SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 40A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized
 Silicon Standard
Silicon Standard		 datasheet pdf - Silicon Standard
40N60

IXSH40N60

VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
40N03GP

N-channel Enhancement-mode Power MOSFET

Advanced Power Electronics Corp. AP40N03GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge D Fast Switching Performance RoHS-compliant, halogen-free G S BV DSS RDS(ON) ID 30V 17mΩ 40A Description Advanced Power MOSFETs from APEC
Advanced Power Electronics
Advanced Power Electronics		 datasheet pdf - Advanced Power Electronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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