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Datasheet 3N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 3N80 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N80
·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,convert |
 Inchange Semiconductor |
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| 4 | 3N80 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(3A, 800Volts)
The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. thr |
 nELL |
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| 3 | 3N80 | 800 Volts N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3N80
Preliminary Power MOSFET
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for u |
 Unisonic Technologies |
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| 2 | 3N80A | SSS3N80A |
 Samsung semiconductor |
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