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Datasheet 3N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | 3N60 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
3N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (3A, 600Volts)
DESCRIPTION
The Nell 3N60 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thresho |
nELL |
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7 | 3N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N60
·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,convert |
Inchange Semiconductor |
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6 | 3N60 | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3N60
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a h |
Unisonic Technologies |
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5 | 3N60A | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 3N60A
3A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche |
Unisonic Technologies |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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