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Datasheet 3N191 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | 3N191 | Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N190 / 3N191
FEATURES
CORPORATION
• Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Vo |
Calogic LLC |
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4 | 3N191 | P-CHANNEL DUAL MOSFET ENHANCEMENT MODE 3N190 3N191
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation |
Linear Integrated Systems |
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3 | 3N191 | Amplifier 3N191 P-CHANNEL MOSFET
The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited ABS |
Micross |
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2 | 3N191 | (3N188 - 3N191) Dual P-Channel Enhancement Mode MOSFET Free Datasheet http://
Free Datasheet http://
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Intersil |
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Número de pieza | Descripción | Fabricantes | |
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