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Datasheet 3DG400 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 3DG400 | SILICON NPN TRANSISTOR 2SD400(3DG400)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于低频功率放大及电子自动调速器。
Purpose: Low frequency power amplifier, electronic governor applications.
极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位
Symbol Rating Unit
VCBO |
 LZG |
 |
| 2 | 3DG40005AS-H | Silicon NPN Transistor 产品概述
3DG40005 AS-H是硅 NPN 型功率开关晶体管， 该产品采用平面工艺，硅 重掺杂衬底材料，深基区 工艺，提高了产品的 EB 阻断电压、开关速度和可 靠性。
硅 NPN 双极型晶体管
3DG40005 AS-H
○R
产品特点
● 高 EB 阻断电压 （VEB |
 Huajing Microelectronics |
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| 1 | 3DG4006 | NPN Transistor 1
3DG4006 NPN
3DG4006
2
2.1
2.2
B4(A3-02B)
8.64 9.39
12.5 25.0 6.10 6.60
Tamb= 25
-
Ta=25 Tc=25
VCE0 VCB0 VEB0
IC
Ptot
Tj Tstg
35 55 4 0.4 1.0 3.5 150 -55 150
V V V A
W
Tamb= 25
45
8.01 8.50 EBC
- ICB0 VCB=30V IE=0 0.1 mA
- IEB0 VEB=3V IC=0
0.1 mA
hFE VCE=10V IC=10mA 50
110
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VCE |
Huajing Microelectronics |
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