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Datasheet 3DD303B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 3DD303B | Silicon Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
3DD303B
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max) @IC= 0.5A
APPLICATIONS ·Designed for B/W TV vertical o |
Inchange |
3DD3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
3DD313 | SILICON NPN TRANSISTOR |
LZG |
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3DD3402 | D3402 |
ETC |
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3DD3320AN | Silicon NPN triple diffusion type bipolar transistor |
Huajing Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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