Datasheet 3DD15B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3DD15B	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·D	Inchange Semiconductor

3DD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3DD13009	NPN Transistor 3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter	LGE
3DD2499	Low-frequency amplification case - rated bipolar transistors »ª¾§·ÖÁ¢Æ÷¼þ 3DD2499 µÍÆ ·Å´ó¹Ü¿Ç¶î ¨Ë«¼ ÐÍ¾§Ìå¹Ü 1 ãµØÌëÓöÊÅ¸ 3DD2499 ¹è ¹ ÂÏçÈãµØÌäÆ ß¸¹Ñçµ©´÷» ì¿È¶ÙËØ¹ª¿ Íµ ½¹ÑÍº¥± ÃºÔÐØÌ÷Áçµ ½ÊÎÐ°×â· ¡Ð÷Áç	ETC
3DD207	Silicon NPN Power Transistors Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD207 DESCRIPTION ¡¤ With TO-3 package ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collect	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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