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Datasheet 3DD15 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 3DD15 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD15
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS ·De |
 Inchange Semiconductor |
 |
| 9 | 3DD1545 | NPN Transistor 1
3DD1545 NPN
, 21
3DD1545
2
2.1
2.2
TO-3P(H)IS
Tamb= 25
-
Ta=25 Tc=25
VCE0 VCB0 VEB0
IC
Ptot
Tj Tstg
600 1500
5 5 3 50 150 -55 150
V V V A
W
Tamb= 25
17max
26.5max 4.5
15.5max
5.5max
3max 3.6
2max 0.75max
5.45 5.45
BCE
3.3min
0.9max
-
-
a:
tp 300 s,
ICB0 IEB0 hFEa VCEsata VBEsa |
 Huajing Microelectronics |
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| 8 | 3DD1555 | CASE-RATED BIPOLAR TRANSISTOR CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY
R
3DD1555
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V 5A 5 V(max) 1 s(max)
Package TO-3P(H)IS
APPLICATIONS
z z Horizontal deflection output for color TV.
FEATURES
z3DD1555 NPN
z 3DD1555 is high breakdown voltage of NPN bip |
 JILIN SINO |
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| 7 | 3DD1555 | NPN Transistor
»ª¾§·ÖÁ¢Æ÷¼þ
3DD1555
µÍÆ ·Å´ó¹Ü¿Ç¶î ¨Ë«¼ Ð;§Ìå¹Ü
1 ãµØÌëÓöÊŸ
3DD1555 ¹è ¹ ÂÏçÈãµØÌäÆ
߸¹Ñ絩´÷» ì¿È¶ÙËعª¿ ͵ ½¹Ñͺ¥± úÔÐØÌ÷Áçµ ½ÊÎа×â· ¡Ð÷Á絩Â
NPN ʦ¹ |
 ETC |
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