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Datasheet 3DD13009 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 3DD13009 | NPN Transistor 3DD13009(NPN)
TO-220 Transistor
1. BASE
TO-220
2. COLLECTOR
Features
3 2 1
power switching applications
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
 LGE |
 |
| 11 | 3DD13009 | Silicon NPN triple diffusion type bipolar transistor 1
3DD13009 NPN
3DD13009
2
2.1
2.2
TO-220F
Tamb= 25
-
Ta=25 Tc=25
VCE0 VCB0 VEB0
IC
Ptot
Tj Tstg
400 700 9 12 2 100 150 -55 150
V V V A
W
Tamb= 25
10.4max 3.2
2.7max
4.8max
2.7 15.5max
1.2
0.6
2.54 2.54 BCE
12.7min
2.3 0.6
- ICB0 VCB=700V, IE=0 - IEB0 VEB=9V, IC=0
0.1 mA 0.1 mA
hFE |
 ETC |
|
| 10 | 3DD13009 | NPN Transistor Dayan Technology Industry Co., Ltd. Shenzhen
1. NPN
3DD13009
2. TO-220 3.
4. Ta=25
VCBO
VCEO
VEBO
IC
T a=25
PC
T c=25
Tj
Tstg
5 Ta=25
700 400
9 12 3.0 100 150 -55~150
V V V A W W
B VCBO B VCEO B VEBO ICBO ICEO IEBO VCE sat
VBEsat hFE tf ts fT
Mi Ma
nx
IC= 1mA IE=0
700
V
IC= 10 |
 Dayan Technology |
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| 9 | 3DD13009-A9 | Silicon NPN triple diffusion type bipolar transistor 产品概述
3DD13009 A9 是硅 NPN 型功率开关晶体管，该产品 采用平面工艺，分压环终端 结构和少子寿命控制技术， 提高了产品的击穿电压、开 关速度和可靠性。
硅三重扩散 NPN 双极型晶体管
3DD13009 A9
○R
产品特点
● 开关损耗 |
ETC |
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