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3DD13009 Equivalent ( Datasheet, PDF )

N.º Número de pieza Descripción Fabricantes PDF
12 3DD13009   NPN Transistor

3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec
LGE
LGE
datasheet 3DD13009 pdf
11 3DD13009   Silicon NPN triple diffusion type bipolar transistor

1 3DD13009 NPN 3DD13009 2 2.1 2.2 TO-220F Tamb= 25 - Ta=25 Tc=25 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 400 700 9 12 2 100 150 -55 150 V V V A W Tamb= 25 10.4max 3.2 2.7max 4.8max 2.7 15.5max 1.2 0.6 2.54 2.54 BCE 12.7min 2.3 0.6 - ICB0 VCB=700V, IE=0 - IEB0 VEB=9V, IC=0 0.1 mA 0.1 mA hFE
ETC
ETC
datasheet 3DD13009 pdf
10 3DD13009   NPN Transistor

Dayan Technology Industry Co., Ltd. Shenzhen 1. NPN 3DD13009 2. TO-220 3. 4. Ta=25 VCBO VCEO VEBO IC T a=25 PC T c=25 Tj Tstg 5 Ta=25 700 400 9 12 3.0 100 150 -55~150 V V V A W W B VCBO B VCEO B VEBO ICBO ICEO IEBO VCE sat VBEsat hFE tf ts fT Mi Ma nx IC= 1mA IE=0 700 V IC= 10
Dayan Technology
Dayan Technology
datasheet 3DD13009 pdf
9 3DD13009-A9   Silicon NPN triple diffusion type bipolar transistor

产品概述 3DD13009 A9 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD13009 A9 ○R 产品特点 ● 开关损耗
ETC
ETC
datasheet 3DD13009-A9 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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