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Datasheet 3DD13002B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 3DD13002B | Switch Mode NPN Transistors 3DD13002B
Switch Mode NPN Transistors
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storag |
 Weitron Technology |
 |
| 3 | 3DD13002B | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B
FEATURE Power dissipation PCM: Collector current ICM: 900
TRANSISTOR (NPN)
TO-92
1. EMITTER
mW (Tamb=25℃)
2. COLLECTOR
3. BASE
3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage |
 Jiangsu Changjiang |
|
| 2 | 3DD13002B1 | Silicon NPN Transistor 硅三重扩散 NPN 双极型晶体管
3DD13002 B1
○R
产品概述
3DD13002 B1 是硅 NPN 型功率开关晶体管，该产品 采用平面工艺，分压环终端 结构和少子寿命控制技术， 提高了产品的击穿电压、开 关速度和可靠性。
产品特点
● 开关损耗� |
 Huajing Microelectronics |
|
| 1 | 3DD13002B1-7 | Silicon NPN Transistor 硅三重扩散 NPN 双极型晶体管
3DD13002 B1-7
○R
产品概述
3DD13002 B1-7 是硅 NPN 型功率开关晶体管，该 产品采用平面工艺，分压环 终端结构和少子寿命控制 技术，提高了产品的击穿电 压、开关速度和可靠性。
产品特点
● 开关损� |
Huajing Microelectronics |
|
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