Datasheet 320N20N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	320N20N	Power-Transistor IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS	Infineon

320N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
320N20N	Power-Transistor IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free	Infineon
320NSR	Standard Recovery Diodes Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 32 320NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unles	Naina Semiconductor
320NS	Standard Recovery Diodes Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 32 320NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unles	Naina Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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