Datasheet 30H150 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	30H150	N-Channel Enhancement Mode MOSFET 30H150 N-Channel Enhancement Mode MOSFET Features • 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in	FNK

30H Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
30H150	N-Channel Enhancement Mode MOSFET 30H150 N-Channel Enhancement Mode MOSFET Features • 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications •	FNK
30H80CT	MBR30H80CT MBR30H80CT, MBRB30H80CT-1 SWITCHMODE™ Power Rectifier 80 V, 30 A Features and Benefits http://onsemi.com • • • • Low Power Loss/High Efficiency High Surge Capacity 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices SCHOTTKY BARRIER RECTIFIER 30 AMPERES 80 V	ON Semiconductor
30HB400	Diode ( Rectifier )	American Microsemiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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