Datasheet 2SK2396A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2396A	Silicon Power MOS FET N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.C. VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.6 200 65 200 V V A W /W TA = 25 IGSS VGS off	Renesas

2SK23 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK2396A	Silicon Power MOS FET N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.C. VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.6 200 65 200 V V A W /W TA	Renesas
2SK2372	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES �	NEC
2SK2388	Silicon N-Channel MOS Type	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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