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Datasheet 2SK2111-HF Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 2SK2111-HF   N-Channel MOSFET

SMD Type N-Channel MOSFET 2SK2111-HF MOSFET ■ Features ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS = 4V) ● Pb−Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G−Suffix Denotes a P
 Kexin
Kexin		 datasheet 2SK2111-HF pdf

2SK2111 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
2SK2111

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance
NEC
NEC		 datasheet pdf - NEC
2SK2111

MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +
 Kexin
Kexin		 datasheet pdf - Kexin
2SK2111-HF

N-Channel MOSFET

SMD Type N-Channel MOSFET 2SK2111-HF MOSFET ■ Features ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS = 4V) ● Pb−Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G
 Kexin
Kexin		 datasheet pdf - Kexin


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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