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Datasheet 2SK2111 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK2111 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor 2SK2111
MOSFICET
Features
Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
12 3
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.6 |
 Kexin |
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| 2 | 2SK2111 | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching |
 NEC |
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| 1 | 2SK2111-HF | N-Channel MOSFET SMD Type
N-Channel MOSFET 2SK2111-HF
MOSFET
■ Features
● VDS (V) = 60V ● ID = 1 A
Drain (D)
● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS = 4V)
● Pb−Free Package May be Available.
Gate (G)
Gate protection
Internal diode
diode
Source (S)
The G−Suffix Denotes a P |
Kexin |
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