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Datasheet 2SD1664 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SD1664 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD1664
2SD1664 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 1 A Collector-base voltage
OV(BR)CBO:
40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
IC |
 WEJ |
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| 6 | 2SD1664 | Medium Power Transistor (32V/ 1A) Transistors
Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm)
FAbsolute maximum ratings ( |
 ROHM Semiconductor |
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| 5 | 2SD1664 | MEDIUM POWER NPN TRANSISTOR UTC 2SD1664
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER NPN TRANSISTOR
DESCRIPTION
The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor.
1
FEATURES
*Low VCE(sat): VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132.
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MA |
 Unisonic Technologies |
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| 4 | 2SD1664 | Medium Power Transistor SMD Type
Medium Power Transistor 2SD1664
Transistors
Features
Low VCE(sat) Compliments to 2SB1132
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) PW =20ms, duty=1/2 Collector Power Dissipation Jumction tempera |
 Kexin |
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