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Datasheet 2SD1662 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1662 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPL |
 Inchange Semiconductor |
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| 1 | 2SD1662 | Silicon NPN Triple Diffused Type TRANSISTOR 2SD1662
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD1662
High Current Switching Applications
Unit: mm
· High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A) · Monolithic co |
 Toshiba Semiconductor |
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