DataSheet.es    



Datasheet 2SD1662 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 2SD1662   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPL
Inchange Semiconductor
Inchange Semiconductor
datasheet 2SD1662 pdf
1 2SD1662   Silicon NPN Triple Diffused Type TRANSISTOR

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm · High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A) · Monolithic co
Toshiba Semiconductor
Toshiba Semiconductor
datasheet 2SD1662 pdf


Esta página es del resultado de búsqueda del 2SD1662. Si pulsa el resultado de búsqueda de 2SD1662 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


Enlace url :
[1] 

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


www.DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap