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Datasheet 2SD1606 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 2SD1606   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1606 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 3A APPLICATIONS ·Designed for low frequency power amplifiers applications. AB
Inchange Semiconductor
Inchange Semiconductor
datasheet 2SD1606 pdf
1 2SD1606   Silicon NPN Triple Diffused

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter
Hitachi Semiconductor
Hitachi Semiconductor
datasheet 2SD1606 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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