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Datasheet 2SD1606 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SD1606 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1606
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 3A
APPLICATIONS ·Designed for low frequency power amplifiers applications.
AB |
Inchange Semiconductor |
|
1 | 2SD1606 | Silicon NPN Triple Diffused 2SD1606
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3
1
2 3
2SD1606
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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