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Datasheet 2SD1005 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2SD1005 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
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3 | 2SD1005 | NPN Silicon Epitaxia SMD Type
NPN Silicon Epitaxia 2SD1005
Transistors
Features
World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V.
Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter |
Kexin |
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2 | 2SD1005 | TRANSISTOR 2SD1005 TRANSISTOR (NPN)
FEATURES z Small Flat Package z High Breakdown Voltage z Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emi |
Jin Yu Semiconductor |
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1 | 2SD1005 | NPN Plastic Encapsulated Transistor 2SD1005
Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
SOT-89
4
High Breakdown Voltage Excellent DC Current Gain Linearity
A
B C 3 E
C
1
2
CLASSIFICATION OF hFE(1)
P |
SeCoS |
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Número de pieza | Descripción | Fabricantes | |
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