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Datasheet 2SC563 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SC563 | Si NPN Epitaxial Planar |
 ETC |
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| 8 | 2SC5631 | Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier 2SC5631
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features
• High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz
Outline
UPAK
3
2
1
4 1. |
 Hitachi Semiconductor |
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| 7 | 2SC5632 | Silicon NPN epitaxial planar type Transistors
2SC5632
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
(0.425) 0.3+0.1 –0.0
Unit: mm
0.15+0.10 –0.05
■ Features
• High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the ta |
 Panasonic Semiconductor |
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| 6 | 2SC5634 | FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE :mm
2.5 0.5 1.5 0.5
1
2
3
1 2 3
JEITA:SC-59
VCBO VCEO VEBO IC PC Tj Tstg
15 6 1.5 50 150 +125 -55~+125
V V V mA mW
I I
CBO EBO
VCB =10V, I E =0mA VEB =1V, I C=0mA VCE =5V, I C=10mA VCE =5V, I E =10mA VCB =5V, I E =0mA, f =1MHz
2
1.0 1.0 50 5.0 9.0 8.0 1.0 12.0 1.4 2 |
 Isahaya Electronics |
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